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this document is a general product descripti on and is subject to change without notice. hynix semiconductor does not assume any responsibility for use of circuits described. no pat ent licenses are implied. rev. 0.1 / mar 2009 1 240pin ddr2 sdram unbuffered dimms based on 2gb a version this hynix unbuffered dual in-line memory module (dimm) series consists of 2gb a version ddr2 sdrams in fine ball grid array (f bga) packages on a 240pin glass-epoxy substrate. this hynix 2gb version a based ddr2 unbuffered di mm series provide a high performa nce 8 byte interface in 133.35mm width form factor of industry standard. it is suitable for easy interchange and addition. features ordering information part name density org. # of dram s # of ranks materials ecc hmp351u6afr8c - y5/s5/s6 4gb 512mx64 16 2 halogen-free none hmp351u7afr8c - y5/s5/s6 4gb 512mx72 18 2 halogen-free ecc ? jedec standard double data rate2 synchronous drams (ddr2 sdrams) with 1.8v +/- 0.1v power supply ? all inputs and outputs are compatible with sstl_1.8 interface ? 8 bank architecture ?posted cas ? programmable cas latency 3,4,5, 6 ? ocd (off-chip driver impedance adjustment) ? odt (on-die termination) ? fully differential clock operations (ck & ck ) ? programmable burst length 4 / 8 with both sequential and interleave mode ? auto refresh and self refresh supported ? 8192 refresh cycles / 64ms ? serial presence detect with eeprom ? ddr2 sdram package: 60ball fbga(256mx8) ? 133.35 x 30.00 mm form factor ? rohs compliant
rev. 0.1 / mar 2009 2 1 240pin ddr2 sdram unbuffered dimms speed grade & key parameters address table y5 (ddr2-667) s6 (ddr2-800) s5 (ddr2-800) unit speed @cl3 400 400 400 mbps speed @cl4 533 533 533 mbps speed @cl5 667 800 800 mbps speed @cl6 - 800 800 mbps cl-trcd-trp 5-5-5 6-6-6 5-5-5 tck density organization ranks sdrams # of drams # of row/bank/column address refresh method 4gb 512m x 64 2 256mb x 8 16 14(a0~a13)/3(ba0~ba2)/10(a0~a9) 8k / 64ms 4gb 512m x 72 2 256mb x 8 18 14(a0~a13)/3(ba0~ba2)/10(a0~a9) 8k / 64ms
rev. 0.1 / mar 2009 3 1 240pin ddr2 sdram unbuffered dimms input/output functional description symbol type polarity pin description ck[2:0], ck [2:0] sstl differential crossing ck and /ck are differential clock inputs. all the ddr2 sdram addr/cntl inputs are sam- pled on the crossing of positive edge of ck and negative edge of /ck. output(read) data is reference to the crossing of ck and /ck (both directions of crossing) cke[1:0] sstl active high activates the ddr2 sdram ck signal when high and deactivates the ck signal when low. by deactivating the cl ocks, cke low initiates the power down mode or the self refresh mode. s [1:0] sstl active low enables the associated ddr2 sdram co mmand decoder when low and disables the command decoder when high. when the comm and decoder is disabled, new commands are ignored but previous operations c ontinue. rank 0 is selected by s 0; rank 1 is selected by s 1 ras , cas , we sstl active low /ras,/cas and /we(along with s) define the command being entered. odt[1:0] sstl active high asserts on-die termination for dq, dm, dqs and dqs signals if enabled via the ddr2 sdram mode register. vref supply reference voltage for sstl18 inputs v ddq supply power supplies for the ddr2 sdram output buffers to provide improved noise immu- nity. for all current ddr2 unbuffered dimm designs, v ddq shares the same power plane as v dd pins. ba[2:0] sstl - selects which ddr2 sdram internal bank of four or eight is activated. a[9:0], a10/ap, a[13:11] sstl - during a bank activate command cycl e, address input defines the row address(ra0~ra15) during a read or write command cycle, address input defines the column address when sampled at the cross point of the rising edge of ck and falling edge of ck . in addition to the column address, ap is used to invoke autoprecharge operation at the end of the burst read or write cycle. if ap is high., autoprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, aut oprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is high, all banks will be precharged regardless of the state of ba0-ban inputs. if ap is low, then ba0-ban are used to define which bank to precharge. dq[63:0], cb[7:0] sstl - data and check bit input/output pins. dm[8:0] sstl active high dm is an input mask signal for write data. input data is masked when dm is sampled high coincident with that input data during a write access. dm is sampled on both edges of dqs. although dm pins are input only, the dm loading matches the dq and dqs loading. v dd ,v ss supply power and ground for the ddr2 sdram input buffers, and core logic. v dd and v ddq pins are tied to v dd /v ddq planes on these modules. dqs[8:0], dqs [8:0] sstl differential crossing data strobe for input and output data. for rawcards using x16 organized drams, dq0~7 connect to the ldqs pin of the dr ams and dq8~15 connect to the udqs pin of the dram sa[2:0] - these signals are tied at the system planar to either v ss or v dd to configure the serial spd eeprom. sda - this is a bidirectional pin used to transfer data into or out of the spd eeprom. a resister must be connected to v dd to act as a pull up. scl - this signal is used to clock data into and out of the spd eeprom. a resistor may be connected from scl to v dd to act as a pull up on the system board. vddspd supply power supply for spd eeprom. this supply is separate from the vdd/vddq power plane. eeprom supply is operable from 1.7v to 3.6v.
rev. 0.1 / mar 2009 4 1 240pin ddr2 sdram unbuffered dimms pin configuration pin assignment pin name pin name pin name pin name pin name pin name 1 vref 41 vss 81 dq33 121 vss 161 nc(cb4)* 201 vss 2 vss 42 nc(cb0)* 82 vss 122 dq4 162 nc(cb5)* 202 dm4 3 dq0 43 nc(cb1)* 83 dqs 4 123 dq5 163 vss 203 nc 4 dq1 44 vss 84 dqs4 124 vss 164 nc(dm8)* 204 vss 5 vss 45 nc(dqs 8)* 85 vss 125 dm0 165 nc 205 dq38 6dqs 0 46 nc(dqs8)* 86 dq34 126 nc 166 vss 206 dq39 7 dqs0 47 vss 87 dq35 127 vss 167 nc(cb6)* 207 vss 8 vss 48 nc(cb2)* 88 vss 128 dq6 168 nc(cb7)* 208 dq44 9 dq2 49 nc(cb3)* 89 dq40 129 dq7 169 vss 209 dq45 10 dq3 50 vss 90 dq41 130 vss 170 vddq 210 vss 11 vss 51 vddq 91 vss 131 dq12 171 cke1 211 dm5 12 dq8 52 cke0 92 dqs 5 132 dq13 172 vdd 212 nc 13 dq9 53 vdd 93 dqs5 133 vss 173 a15 213 vss 14 vss 54 ba2 94 vss 134 dm1 174 a14 214 dq46 15 dqs 1 55 nc 95 dq42 135 nc 175 vddq 215 dq47 16 dqs1 56 vddq 96 dq43 136 vss 176 a12 216 vss 17 vss 57 a11 97 vss 137 ck1 177 a9 217 dq52 18 nc 58 a7 98 dq48 138 ck 1 178 vdd 218 dq53 19 nc 59 vdd 99 dq49 139 vss 179 a8 219 vss 20 vss 60 a5 100 vss 140 dq14 180 a6 220 ck2 21 dq10 61 a4 101 sa2 141 dq15 181 vddq 221 ck 2 22 dq11 62 vddq 102 nc,test 1 142 vss 182 a3 222 vss 1 pin front side 64 pin 65 pin 120 pin 121 pin back side 184 pin 185 pin 240 pin * the pin names in parenthesizes are applied to dimm with ecc only.
pin assignment(continued) * nc=no connect notes: 1. the test pin is reserved for bus analysis tools and is not connected on standard memory module products (dimms). 2. nc pins should not be connected to anything, including bussing within the nc group. pin name pin name pin name pin name pin name pin name 23 vss 63 a2 103 vss 143 dq20 183 a1 223 dm6 24 dq16 64 vdd 104 dqs 6 144 dq21 184 vdd 224 nc 25 dq17 65 vss 105 dqs6 145 vss 185 ck0 225 vss 26 vss 66 vss 106 vss 146 dm2 186 ck 0 226 dq54 27 dqs 2 67 vdd 107 dq50 147 nc 187 vdd 227 dq55 28 dqs2 68 nc 108 dq51 148 vss 188 a0 228 vss 29 vss 69 vdd 109 vss 149 dq22 189 vdd 229 dq60 30 dq18 70 a10/ap 110 dq56 150 dq23 190 ba1 230 dq61 31 dq19 71 ba0 111 dq57 151 vss 191 vddq 231 vss 32 vss 72 vddq 112 vss 152 dq28 192 ras 232 dm7 33 dq24 73 we 113 dqs 7 153 dq29 193 s 0 233 nc 34 dq25 74 cas 114 dqs7 154 vss 194 vddq 234 vss 35 vss 75 vddq 115 vss 155 dm3 195 odt0 235 dq62 36 dqs 376 s 1 116 dq58 156 nc 196 a13 236 dq63 37 dqs3 77 odt1 117 dq59 157 vss 197 vdd 237 vss 38 vss 78 vddq 118 vss 158 dq30 198 vss 238 vddspd 39 dq26 79 vss 119 sda 159 dq31 199 dq36 239 sa0 40 dq27 80 dq32 120 scl 160 vss 200 dq37 240 sa1
rev. 0.1 / mar 2009 6 1 240pin ddr2 sdram unbuffered dimms functional block diagram 4gb(512mbx64) - hmp351u6afr8c /s0 /dqs0 dm0 dqs0 d0 / dq0 i/ o 0 dq1 i/ o 1 dq2 i/ o 2 dq3 i/ o 3 dq4 i/ o 4 dq5 i/ o 5 dq6 i/ o 6 i/ o 7 dq7 /dqs1 dm1 dqs1 d1 dq8 i/ o 0 dq9 i/ o 1 dq10 i/ o 2 dq11 i/ o 3 dq12 i/ o 4 dq13 i/ o 5 dq14 i/ o 6 i/ o 7 dq15 /dqs2 dm2 dqs2 d2 dq16 i/ o 0 dq17 i/ o 1 dq18 i/ o 2 dq19 i/ o 3 dq20 i/ o 4 dq21 i/ o 5 dq22 i/ o 6 i/ o 7 dq23 /dqs3 dm3 dqs3 d3 dq24 i/ o 0 dq25 i/ o 1 dq26 i/ o 2 dq27 i/ o 3 dq28 i/ o 4 dq29 i/ o 5 dq30 i/ o 6 i/ o 7 dq31 d8 i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d9 i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d10 i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d11 i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d12 i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d15 i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 /dqs4 dm4 dqs4 d4 dq32 i/ o 0 dq33 i/ o 1 dq34 i/ o 2 dq35 i/ o 3 dq36 i/ o 4 dq37 i/ o 5 dq38 i/ o 6 i/ o 7 dq39 /dqs5 dm5 dqs5 d5 dq40 i/ o 0 dq41 i/ o 1 dq42 i/ o 2 dq43 i/ o 3 dq44 i/ o 4 dq45 i/ o 5 dq46 i/ o 6 i/ o 7 dq47 /dqs6 dm6 dqs6 d6 dq48 i/ o 0 dq49 i/ o 1 dq50 i/ o 2 dq51 i/ o 3 dq52 i/ o 4 dq53 i/ o 5 dq54 i/ o 6 i/ o 7 dq55 /dqs7 dm7 dqs7 d7 dq56 i/ o 0 dq57 i/ o 1 dq58 i/ o 2 dq59 i/ o 3 dq60 i/ o 4 dq61 i/ o 5 dq62 i/ o 6 i/ o 7 dq63 d14 i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d13 i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 /s1 scl sda a0 a1 wp serial pd scl sa0 sa1 sa2 a1 ba0-ba2 a0-a15 /ras /cas sdrams d0-d15 cke0 /we cke1 odt0 odt1 sdrams d0-d15 sdrams d0-d7 sdrams d8-d15 sdrams d0-d15 sdrams d0-d15 sdrams d0-d15 sdrams d0-d7 sdrams d8-d15 /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm /cs dqs /dqs dm notes: 1. dq,dm,dqs,/dqs resistors : 22 ? +/- 5 %. 2. bax,ax,/ras,/cas,/we resistors : 7.5 ? +/- 5 %. v dd spd v ref v dd /v ddq v ss serial pd do-d15 do-d15 do-d15 clock signal loads ck0, /ck0 ck1, /ck1 4 6 ck2, /ck2 6 clock input sdrams
rev. 0.1 / mar 2009 7 1 240pin ddr2 sdram unbuffered dimms functional block diagram 4gb(512mbx72) - hmp351u7afr8c /s0 /dqs0 dm0 dqs0 d0 / cs dqs /dqs dm dq0 i/ o 0 dq1 i/ o 1 dq2 i/ o 2 dq3 i/ o 3 dq4 i/ o 4 dq5 i/ o 5 dq6 i/ o 6 i/ o 7 dq7 /dqs1 dm1 dqs1 d1 / cs dqs /dqs dm dq8 i/ o 0 dq9 i/ o 1 dq10 i/ o 2 dq11 i/ o 3 dq12 i/ o 4 dq13 i/ o 5 dq14 i/ o 6 i/ o 7 dq15 /dqs2 dm2 dqs2 d2 / cs dqs /dqs dq16 i/ o 0 dq17 i/ o 1 dq18 i/ o 2 dq19 i/ o 3 dq20 i/ o 4 dq21 i/ o 5 dq22 i/ o 6 i/ o 7 dq23 /dqs3 dm3 dqs3 d3 / cs dqs /dqs dm dq24 i/ o 0 dq25 i/ o 1 dq26 i/ o 2 dq27 i/ o 3 dq28 i/ o 4 dq29 i/ o 5 dq30 i/ o 6 i/ o 7 dq31 /dqs8 dm8 dqs8 d8 / cs dqs /dqs dm cb0 i/ o 0 cb1 i/ o 1 cb2 i/ o 2 cb3 i/ o 3 cb4 i/ o 4 cb5 i/ o 5 cb6 i/ o 6 i/ o 7 cb7 d9 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d10 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d11 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d12 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d17 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d13 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d16 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 /dqs4 dm4 dqs4 d4 / cs dqs /dqs dm dq32 i/ o 0 dq33 i/ o 1 dq34 i/ o 2 dq35 i/ o 3 dq36 i/ o 4 dq37 i/ o 5 dq38 i/ o 6 i/ o 7 dq39 /dqs5 dm5 dqs5 d5 / cs dqs /dqs dm dq40 i/ o 0 dq41 i/ o 1 dq42 i/ o 2 dq43 i/ o 3 dq44 i/ o 4 dq45 i/ o 5 dq46 i/ o 6 i/ o 7 dq47 /dqs6 dm6 dqs6 d6 / cs dqs /dqs dm dq48 i/ o 0 dq49 i/ o 1 dq50 i/ o 2 dq51 i/ o 3 dq52 i/ o 4 dq53 i/ o 5 dq54 i/ o 6 i/ o 7 dq55 /dqs7 dm7 dqs7 d7 / cs dqs /dqs dm dq56 i/ o 0 dq57 i/ o 1 dq58 i/ o 2 dq59 i/ o 3 dq60 i/ o 4 dq61 i/ o 5 dq62 i/ o 6 i/ o 7 dq63 d15 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 d14 / cs dqs /dqs dm i/ o 0 i/ o 1 i/ o 2 i/ o 3 i/ o 4 i/ o 5 i/ o 6 i/ o 7 /s1 scl sda a0 a1 wp serial pd scl sa0 sa1 sa2 a1 ba0-ba2 a0-a13 /ras /cas sdrams d0-d17 cke0 /we cke1 odt0 odt1 sdrams d0-d17 sdrams d0-d8 sdrams d9-d17 sdrams d0-d17 sdrams d0-d17 sdrams d0-d17 sdrams d0-d8 sdrams d9-d17 notes: 1. dq,dm,dqs,/dqs resistors : 22 ? +/- 5 %. 2. bax,ax,/ras,/cas,/we resistors : 7.5 ? +/- 5 %. v dd spd v ref v dd /v ddq v ss serial pd do-d17 do-d17 do-d17 clock signal loads ck0, /ck0 ck1, /ck1 6 6 ck2, /ck2 6 clock input sdrams
rev. 0.1 / mar 2009 8 1 240pin ddr2 sdram unbuffered dimms absolute maximum ratings operation conditions and environmental parameters notes: 1. stress greater than those listed may cause permanent dam age to the device. this is a stress rating only, and device functional operation at or above the conditions indicat ed is not implied. exposure to absolute maximum rating con ditions for extended periods may affect reliability. 2. up to 9850 ft. 3. if the dram case temperature is above 85 o c, the auto-refresh command interval has to be reduced to trefi=3.9us. for measurement conditions of t case , please refer to the jedec document jesd51-2. dc operating conditions (sstl_1.8) notes: 1. min. type. and max. values increase by 100mv for c3(ddr2-533 3-3-3) speed option. 2. vddq tracks with vdd,vddl tracks with vdd. ac parameters are measured with vdd,vddq and vdd. 3. the value of vref may be selected by the user to pr ovide optimum noise margin in the system. typically the value of vref is expected to be about 0.5 x vddq of the transmitting device and vref is expected to track vari- ations in vddq. 4. peak to peak ac noise on vref may not exceed +/-2% vref (dc). 5. vtt of transmitting device must track vref of receiving device. parameter symbol value unit note voltage on v dd pin relative to vss v dd - 1.0 ~ 2.3 v 1 voltage on v ddq pin relative to vss v ddq - 0.5 ~ 2.3 v 1 voltage on any pin relative to vss v in, v out - 0.5 ~ 2.3 v 1 parameter symbol rating units notes dimm operating temperature(ambient) t opr 0 ~ +55 o c storage temperature t stg -50 ~ +100 o c 1 storage humidity(without condensation) h stg 5 to 95 % 1 dimm barometric pressure(operating & storage) p bar 105 to 69 k pascal 2 dram component case temperature range t case 0 ~+95 o c3 symbol parameter rating units notes min. typ. max. vdd supply voltage 1.7 1.8 1.9 v 1 vddl supply voltage for dll 1.7 1.8 1.9 v 1,2 vddq supply voltage for output 1.7 1.8 1.9 v 1,2 vref input reference voltage 0.49*vddq 0.50*vddq 0.51*vddq mv 3,4 vtt termination voltage vref-0.04 vref vref+0.04 v 5 vddspd eeprom supply voltage 1.7 - 3.6 v
rev. 0.1 / mar 2009 9 1 240pin ddr2 sdram unbuffered dimms input dc logic level input ac logic level ac input test conditions notes : 1. input waveform timing is referenced to the input signal crossing through the v ref level applied to the device under test. 2. the input signal minimum slew rate is to be maintained over the range from v ref to v ih(ac) min for rising edges and the range from v ref to v il(ac) max for falling edges as shown in the below figure. 3. ac timings are referenced with input waveforms switch ing from vil(ac) to vih(ac) on the positive transitions and vih(ac) to vil(ac) on the negative transitions. parameter symbol min max unit note dc input logic high v ih (dc) v ref + 0.125 v ddq + 0.3 v dc input logic low v il (dc) -0.30 v ref - 0.125 v parameter symbol ddr2 667, 800 unit note min max ac input logic high v ih (ac) v ref + 0.200 - v ac input logic low v il (ac) -v ref - 0.200 v symbol condition value units notes v ref input reference voltage 0.5 * v ddq v1 v swing(max) input signal maximum peak to peak swing 1.0 v 1 slew input signal minimum slew rate 1.0 v/ns 2, 3 v ddq v ih(ac) min v ih(dc) min v ref v il(dc) max v il(ac) max v ss < figure: ac input test signal waveform > v swing(max) delta tr delta tf v ref - v il (ac) max delta tf falling slew = rising slew = v ih(ac) min - v ref delta tr
rev. 0.1 / mar 2009 10 1 240pin ddr2 sdram unbuffered dimms differential input ac logic level 1. v in (dc) specifies the allowable dc execution of eac h input of differential pair such as ck, ck , dqs, dqs , ldqs, ldqs , udqs and udqs . 2. v id (dc) specifies the input differential voltage |v tr -v cp | required for switching, where v tr is the true input (such as ck, dqs, ldqs or udqs) level and v cp is the complementary input (such as ck , dqs , ldqs or udqs ) level. the minimum value is equal to v ih (dc) - v il (dc). notes : 1. v id (ac) specifies the input differential voltage |v tr -v cp | required for switching, where v tr is the true input signal (such as ck, dqs, ldqs or udqs) and v cp is the complementary input signal (such as ck , dqs , ldqs or udqs ). the minimum value is equal to v ih (ac) - v il (ac). 2. the typical value of v ix (ac) is expected to be about 0.5 * v ddq of the transmitting device and v ix (ac) is expected to track variations in v ddq . v ix (ac) indicates the voltage at which differential input signals must cross. differential ac output parameters note: 1. the typical value of v ox (ac) is expected to be about 0.5 * v ddq of the transmitting device and v ox (ac) is expected to track variations in v ddq . v ox (ac) indicates the voltage at which differential output signals must cross. symbol parameter min. max. units note v id (ac) ac differential input voltage 0.5 v ddq + 0.6 v 1 v ix (ac) ac differential cross point voltage 0.5 * v ddq - 0.175 0.5 * v ddq + 0.175 v 2 symbol parameter min. max. units note v ox (ac) ac differential cross point voltage 0.5 * v ddq - 0.125 0.5 * v ddq + 0.125 v 1 v ddq crossing point v ssq v tr v cp v id v ix or v ox < differential signal levels >
rev. 0.1 / mar 2009 11 1 240pin ddr2 sdram unbuffered dimms output buffer levels output ac test conditions note: 1. the vddq of the device under test is referenced. output dc current drive notes: 1.v ddq = 1.7 v; v out = 1420 mv. (v out - v ddq )/i oh must be less than 21 ohm for values of v out between v ddq and v ddq - 280 mv. 2. v ddq = 1.7 v; v out = 280 mv. v out /i ol must be less than 21 ohm for values of v out between 0 v and 280 mv. 3. the dc value of v ref applied to the receivin g device is set to v tt 4. the values of i oh (dc) and i ol (dc) are based on the conditions given in notes 1 and 2. they are used to test device drive current capability to ensure v ih min plus a noise margin and v il max minus a noise margin are delivered to an sstl_18 receiver. the actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define a convenient driver current for measurement. symbol parameter sstl_18 units notes v otr output timing measurement reference level 0.5 * v ddq v1 symbol parameter sstl_18 units notes i oh(dc) output minimum source dc current - 13.4 ma 1, 3, 4 i ol(dc) output minimum sink dc current 13.4 ma 2, 3, 4
rev. 0.1 / mar 2009 12 1 240pin ddr2 sdram unbuffered dimms pin capacitance (vdd=1.8v,vddq=1.8v, ta=25c) 4gb: hmp351u6afr8c 4gb: hmp351u7afr8c notes: 1. pins not under test are tied to gnd. 2. these value are guaranteed by design and tested on a sample basis only. pin symbol min max unit ck, ck cck tbd tbd pf cke, odt, cs ci1 tbd tbd pf address, ras , cas , we ci2 tbd tbd pf dq, dm, dqs, dqs cio tbd tbd pf pin symbol min max unit ck, ck cck tbd tbd pf cke, odt, cs ci1 tbd tbd pf address, ras , cas , we ci2 tbd tbd pf dq, dm, dqs, dqs cio tbd tbd pf
rev. 0.1 / mar 2009 13 1 240pin ddr2 sdram unbuffered dimms 4gb, 512m x 64 u - dimm: hmp351u6afr8c 4gb, 512m x 72 ecc u-dimm: hmp351u7afr8c note: 1. idd6 current values are guaranteed up to tcase of 85c max. symbol y5 (ddr2 667@cl 5) s6 (ddr2 800@cl 6) unit note idd0 1120 1200 ma idd1 1200 1280 ma idd2p 192 192 ma idd2q 720 800 ma idd2n 800 880 ma idd3p(f) 560 560 ma idd3p(s) 288 288 ma idd3n 1120 1280 ma idd4r 2000 2360 ma idd4w 1880 2200 ma idd5b 2160 2280 ma idd6 240 240 ma 1 idd7 2640 2880 ma symbol y5 (ddr2 667@cl 5) s6 (ddr2 800@cl 6) unit note idd0 1260 1350 ma idd1 1350 1440 ma idd2p 216 216 ma idd2q 810 900 ma idd2n 900 990 ma idd3p(f) 630 630 ma idd3p(s) 324 324 ma idd3n 1260 1440 ma idd4r 2250 2655 ma idd4w 2115 2475 ma idd5b 2430 2565 ma idd6 270 270 ma 1 idd7 2970 3240 ma
rev. 0.1 / mar 2009 14 1 240pin ddr2 sdram unbuffered dimms idd measurement conditions notes: 1. idd specifications are tested afte r the device is pr operly initialized 2. input slew rate is specified by ac parametric test condition 3. idd parameters are specified with odt disabled. 4. data bus consists of dq, dm, dqs, dqs , rdqs, rdqs , ldqs, ldqs, udqs, and udqs . idd values must be met with all combinations of emrs bits 10 and 11. 5. definitions for idd low is defined as vin vilac (max) high is defined as vin vihac (min) stable is defined as inputs stable at a high or low level floating is defined as inputs at vref = vddq/2 switching is defined as: inputs changing between high and low every other clock cycle (once per two clocks) for address and control sig- nals, and inputs changing between high and low ever y other data transfer (once per clock) for dq signals not including masks or strobes. symbol conditions units idd0 operating one bank active-precharge current ; t ck = t ck(idd), t rc = t rc(idd), t ras = t ras- min(idd);cke is high, cs is high between valid commands;address bus inputs are switching;data bus inputs are switching ma idd1 operating one bank active-read-precharge current ; iout = 0ma;bl = 4, cl = cl(idd), al = 0; t ck = t ck(idd), t rc = t rc (idd), t ras = t rasmin(idd), t rcd = t rcd(idd); cke is high, cs is high between valid commands; address bus inputs are swit ching; data pattern is same as idd4w ma idd2p precharge power-down current ; all banks idle; t ck = t ck(idd); cke is low; other control and address bus inputs are stable; data bus inputs are floating ma idd2q precharge quiet standby current ;all banks idle; t ck = t ck(idd);cke is high, cs is high; other control and address bus inputs are stable; data bus inputs are floating ma idd2n precharge standby current ; all banks idle; t ck = t ck(idd); cke is high, cs is high; other control and address bus inputs are switching; data bus inputs are switching ma idd3p active power-down current ; all banks open; t ck = t ck(idd); cke is low; other control and address bus inputs are stable; data bus inputs are floating fast pdn exit mrs(12) = 0 ma slow pdn exit mrs(12) = 1 ma idd3n active standby current ; all banks open; t ck = t ck(idd), t ras = t rasmax(idd), t rp = t rp(idd); cke is high, cs is high between valid commands; other contro l and address bus inputs are switching; data bus inputs are switching ma idd4w operating burst write current ; all banks open, continuous burst writes; bl = 4, cl = cl(idd), al = 0; t ck = t ck(idd), t ras = t rasmax(idd), t rp = t rp(idd); cke is high, cs is high between valid commands; address bus inputs are switching; data bus inputs are switching ma idd4r operating burst read current ; all banks open, continuous burst reads, iout = 0ma; bl = 4, cl = cl(idd), al = 0; t ck = t ck(idd), t ras = t rasmax(idd), t rp = t rp(idd); cke is high, cs is high between valid commands; address bus inputs are switching; data pattern is same as idd4w ma idd5b burst refresh current ; t ck = t ck(idd); refresh command at every t rfc(idd) interval; cke is high, cs is high between valid commands; other control and address bus inputs are switching; data bus inputs are switching ma idd6 self refresh current ; ck and ck at 0v; cke 0.2v; other control and address bus inputs are floating; data bus inputs are floating. idd6 current values are guaranteed up to tcase of 85 max. normal ma low power idd7 operating bank interleave read current ; all bank interleaving reads, iout = 0ma; bl = 4, cl = cl(idd), al = t rcd(idd)-1* t ck(idd); t ck = t ck(idd), t rc = t rc(idd), t rrd = t rrd(idd), t rcd = 1* t ck(idd); cke is high, cs is high between valid commands; address bus inputs are stable during deselects; data pattern is same as idd4r; - refer to the following page for detailed timing conditions ma
rev. 0.1 / mar 2009 15 1 240pin ddr2 sdram unbuffered dimms electrical characteristics & ac timings speed bins and cl,trcd,trp,trc an d tras for corresponding bin speed ddr2-800(s5) ddr2-667(y5) unit bin(cl-trcd-trp) 5-5-5 5-5-5 parameter min min cas latency 55 ns trcd 12.5 15 ns trp 12.5 15 ns trc 57.5 60 ns tras 45 45 ns
rev. 0.1 / mar 2009 16 1 240pin ddr2 sdram unbuffered dimms ac timing parameters by speed grade parameter symbol ddr2-667 ddr2-800 unit note min max min max dq output access time from ck/ck tac -450 +450 -400 +400 ps dqs output access time from ck/ck tdqsck -400 +400 -350 +350 ps ck high-level width tch 0.45 0.55 0.45 0.55 tck ck low-level width tcl 0.45 0.55 0.45 0.55 tck ck half period thp min(tcl, tch) - min(tcl, tch) - ps clock cycle time, cl=x tck 3000 8000 2500 ps dq and dm input setup time (differential strobe) tds 100 - 50 - ps 1 dq and dm input hold time (differential strobe) tdh 175 - 125 - ps 1 control & address input pulse width for each input tipw 0.6 - 0.6 - tck dq and dm input pulse width for each input tdipw 0.35 - 0.35 - tck data-out high-impedance time from ck/ck thz - tac max - tac max ps dqs low-impedance time from ck/ck tlz(dqs) tac min tac max tac min tac max ps dq low-impedance time from ck/ck tlz(dq) 2*tac min tac max 2*tac min tac max ps dqs-dq skew for dqs and associated dq signals tdqsq - 240 -200 ps dq hold skew factor tqhs - 340 -300 ps dq/dqs output hold time from dqs tqh thp - tqhs - thp - tqhs - ps first dqs latching transition to associated clock edge tdqss - 0.25 + 0.25 - 0.25 + 0.25 tck dqs input high pulse width tdqsh 0.35 - 0.35 - tck dqs input low pulse width tdqsl 0.35 - 0.35 - tck dqs falling edge to ck setup time tdss 0.2 - 0.2 - tck dqs falling edge hold time from ck tdsh 0.2 - 0.2 - tck mode register set command cycle time tmrd 2 - 2 - tck write preamble twpre 0.35 - 0.35 - tck write postamble twpst 0.4 0.6 0.4 0.6 tck address and control input setup time tis 200 -175 - ps address and control input hold time tih 275 -250 - ps read preamble trpre 0.9 1.1 0.9 1.1 tck read postamble trpst 0.4 0.6 0.4 0.6 tck auto-refresh to active/auto-refresh command period trfc 127.5 - 127.5 - ns active to active command period for 1kb page size products trrd 7.5 -7.5 - ns active to active command period for 2kb page size products trrd 10 -10 - ns four active window for 1kb page size products tfaw 37.5 - 35 - ns four active window for 2kb page size products tfaw 50 - 45 - ns
rev. 0.1 / mar 2009 17 1 240pin ddr2 sdram unbuffered dimms - continued - notes: 1. for details and notes, please refer to the rele vant hynix component datasheet (hy5ps1g[8,16]31cfp). 2. 0 c tcase 85 c 3. 85 c tcase 95 c parameter symbol ddr2-667 ddr2-800 unit note min max min max cas to cas command delay tccd 2 2 tck write recovery time twr 15 -15 - ns auto precharge write recovery + precharge time tdal wr+trp - wr+trp - tck internal write to read command delay twtr 7.5 -7.5 - ns internal read to precharge command delay trtp 7.5 7.5 ns exit self refresh to a non-read command txsnr trfc + 10 trfc + 10 ns exit self refresh to a read command txsrd 200 - 200 - tck exit precharge power down to any non-read command txp 2 - 2 - tck exit active power down to read command txard 2 2 tck exit active power down to read command (slow exit, lower power) txards 7 - al 8 - al tck cke minimum pulse width (high and low pulse width) tcke 3 3 tck odt turn-on delay taond 2 2 2 2 tck odt turn-on taon tac(min) tac(max) +0.7 tac(min) tac(max) +0.7 ns odt turn-on(power-down mode) taonpd tac(min)+2 2tck+ tac(max)+1 tac(min) +2 2tck+ tac(max)+1 ns odt turn-off delay taofd 2.5 2.5 2.5 2.5 tck odt turn-off taof tac(min) tac(max)+ 0.6 tac(min) tac(max) +0.6 ns odt turn-off (power-down mode) taofpd tac(min) +2 2.5tck+ tac(max)+1 tac(min) +2 2.5tck+ tac(max)+1 ns odt to power down entry latency tanpd 3 3 tck odt power down exit latency taxpd 8 8 tck ocd drive mode output delay toit 0 12 0 12 ns minimum time clocks remains on after cke asynchronously drops low tdelay tis+tck+tih tis+tck +tih ns average periodic refresh interval trefi - 7.8 - 7.8 us 2 trefi - 3.9 - 3.9 us 3
rev. 0.1 / mar 2009 18 1 240pin ddr2 sdram unbuffered dimms package outline 512mx 64 - hmp351u6afr8c side 4.00 max. 1.27 +/- 0.1 0 front 30.0 4.00.1 133.35 63.0 5.175 5.175 55.0 5.0 back 0.8 0.05 1.0 0.20 detail of contacts a 2.50 0.20 detail of contacts b 2.50 1.50 0.10 3.80 5.00 3.0 3.0 10.0 17.80 detail-a detail-b note : all dimensions are in millimeters unless otherwise stated. 128.95 (2) 2.5
rev. 0.1 / mar 2009 19 1 240pin ddr2 sdram unbuffered dimms package outline 512mx 72 - hmp351u7afr8c side 4.00 max. 1.27 +/- 0.10 front 30.0 4.00.1 133.35 63.0 5.175 5.175 55.0 5.0 back 0.8 0.05 1.0 0.20 detail of contacts a 2.50 0.20 detail of contacts b 2.50 1.50 0.10 3.80 5.00 3.0 3.0 10.0 17.80 detail-a detail-b note : all dimensions are in millimeters unless otherwise stated. 128.95 (2) 2.5
rev. 0.1 / mar 2009 20 1 240pin ddr2 sdram unbuffered dimms revision history revision history date 0.1 initial data sheet released mar. 2009

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